国際会議

  1. TBP Gakuki Ise,  Daiki Yoda, Chinami Takiguchi, Naoya Shigematsu, Tomohiro Shiratori, Hisami Nakano, Woojae Jeon, Taichi Nozawa, Kei Iwashiro, Takumi Nishino, Toshitatsu Munakata and Takanobu Watanabe, “Controlling The Aerial Posture of a Flapping-wing Micro Air Vehicle by Shifting Its Center of Gravity,” The International Micro Air Vehicle Conference and Competition (IMAV), RMIT Melbourne, November, 19-23 (2018).
  2. TBP Mao Xu, Tianzhuo Zhan, Ryo Yamato, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita, Yibin Xu, and Takanobu Watanabe “Metal/Insulator Multilayered Thermally Conductive Films,” 31st International Microprocesses and Nanotechnology Conference (MNC 2018),  Sapporo Park Hotel, Sapporo, Japan, November, 13-16 (2018).
  3. TBP Keisuke Shima, Motohiro Tomita, Hui Zhang, Tianzhuo Zhan, Takashi Matsukawa, Takeo Matsuki, and Takanobu Watanabe, “Optimum substrate design of planar type Si nanowire thermoelectric generator” 2018 International Conference on Solid State Devices and Materials (SSDM2018), The University of Tokyo, Tokyo, September 9-13, (2018).
  4. TBP Motohiro Tomita, Takehiro Kumada, Keisuke Shima, Tianzhuo Zhan, Hui Zhang, Takashi Matsukawa, Takeo Matsuki, and Takanobu Watanabe, “Substrate Heat Resistance Engineering for Realizing High Performance Si Nanowires Thermoelectric Generator,” 2018 International Conference on Solid State Devices and Materials (SSDM2018), The University of Tokyo, Tokyo, September 9-13, (2018).
  5. TBP Marc Perea, Okuto Takahashi, Shota Kanemaru, Motohiro Tomita, Takanobu Watanabe, “Considering possible descriptors for Dipole Moment at High-k/SiO2 interfaces” 2018 International Conference on Solid State Devices and Materials (SSDM2018), The University of Tokyo, Tokyo, September 12, (2018).
  6. TBP Tianzhuo Zhan, Mao Xu, Ryo Yamato, Motohiro Tomita, Seong-Woo Kim, Koji Koyama, Takanobu Watanabe ,” Large size freestanding diamond substrate with high thermal conductivity fabricated by a two-step micropattern heteroepitaxial growth method ” The 29th International Conference on Diamond and Carbon Materials, Dubrovnik, Croatia, September 2-6 , (2018).
  7. Motohiro Tomita, Shunsuke Ohba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakuri, Yuhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe, “10μW/cm2-Class High Power Density Silicon Thermoelectric Energy Harvester Compatible with CMOS-VLSI Technology,” 2018 Symposium on VLSI Technology,  Hilton Hawaiian Village, Honolulu, June 20, (2018).
  1. Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Takuya Terada, Masataka Ogasawara, Motohiro Tomita, Masashi Kurosawa, and Takanobu Watanabe, “Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment,“ 2nd Electron Devices Technology and Manufacturing (EDTM) Conference 2018, Ariston Hotel Kobe, Kobe, Japan, Mar. 13-15 (2018).
  2. Tianzhuo Zhan, Ryo Yamato, Shuichiro Hashimoto, Shunsuke. Oba, Yuya Himeda, Yibin Xu, Takashi Matsukawa, and Takanobu Watanabe, “Enhanceent of Thermoelectric Power of Silicon Nanowire Micro Thermoelectric Generator by Improving the Thermal Conductivity of AlN Thermal Conductive Film,” The 17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS 2017), Kanazawa Bunka Hall, Kanazawa, Japan, November 14 – 17, 2017.
  3. Koki Nakane, Motohiro Tomita, Takanobu Watanabe, “Machine Learning of Interfacial Dipole Moments Between Multicomponent Oxide Films by Neural Network Model,” 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY(IWDTF 2017), Todaiji Temple Cultural Center, Nara, Japan, November 20, 2017
  4. Nobuhiro Nakagawa, Okuto Takahashi, Takanobu Watanabe, “Computational Experiment on Dipole Formation at High-k/SiO2 Interface Using Virtual Oxide Models,” 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY(IWDTF 2017), Todaiji Temple Cultural Center, Nara, Japan, November 20, 2017
  5. Okuto Takahashi, Nobuhiro Nakagawa, Motohiro Tomita, Takanobu Watanabe ,”Investigation of Dipole Formation at AlOxNy/SiO2 interface by MD simulation,” 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY(IWDTF 2017), Todaiji Temple Cultural Center, Nara, Japan, November 20, 2017
  6. (invited)Takanobu Watanabe, “Molecular Dynamics of Dipole Layer Formation at High-k/SiO2 Interface,” 232nd ECS MEETING, National Harbor, Washington, DC, USA. Oct. 4, 2017.
  7. Yuya Himeda, Shuichiro Hashimoto, Shunsuke Oba, Ryo Yamato, Takashi Matsukawa , Takanobu Watanabe, “Enhancement of Thermoelectric perfomance of p-type Short Silicon Nanowires,” 2017 International Conference on Solid State Devices and Materials, Sendai International Center, Sendai, Japan, September 22, 2017.
  8. Motohiro Tomita, Takanobu Watanabe, “Development of Interatomic Potential of Ge(1-x-y)SixSny Ternary Alloy Semiconductors for Classical Lattice Dynamics Simulation,” 2017 International Conference on  Solid State Devices and Materials (SSDM 2017),  Sendai International Center, Sendai, Japan, September 22, 2017.
  9. Keisuke Shima, Motohiro Tomita, Yoshinari Kamakura, Takanobu Watanabe, “Possibility of Thermoelectric Property Improvement by Non-uniformly Doped Si,” 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai International Center, Sendai, Japan, September 21, 2017.
  10. Ryo Yamato, Shuichiro Hashimoto, Tianzhuo Zhan, Shunsuke Oba, Yuya Himeda, Takashi Matsukawa, Takanobu Watanabe, “Impact of Crystallinity of AlN Thermal Conductive Film on Thermoelectric Power of Silicon Nanowire Micro Thermoelectric Generator, ” 2017 International Conference on Solid State Devices and Materials(SSDM2017), Sendai International Center, Sendai, Japan, September 21, 2017.
  11. (invited)Takanobu Watanabe, “Formation Mechanisms of Gate Oxide Films,” 2017 International Conference on  Solid State Devices and Materials (SSDM 2017), Short Course, Sendai International Center, Sendai, September 19, 2017
  12. Takuya Onishi, Genki Obana, Shuichiro Hashimoto, Motohiro Tomita, Takanobu Watanabe, Kotaro Mura, Toshihiro Tsuda, Tetsuo Yoshimitsu, “Nano-scale Evaluation of Electrical Tree Initiation in Silica/Epoxy Nano-Composite Thin Film,” 8th International Symposium on Electrical Insulating Materials, Toyohashi Chamber of Commerce & Industry, Toyohashi, September 12-15, 2017.
  13. (invited)Takanobu Watanabe, “Silicon-based Micro Thermoelectric Generator Fabricated by CMOS Compatible Process,” The 2017 International Meeting for Future of Electron Devices, Kansai (IMFEDK2017), Ryukoku University Avanti Kyoto Hall, Kyoto,  June 29, 2017
  1. Takanobu Watanabe, Shuhei Asada, Taiyu Xu, Shuichiro Hashimoto, Shunsuke Ohba, Yuya Himeda, Ryo Yamato, Hui Zhang, Motohiro Tomita, Takashi Matsukawa, Yoshinari Kamakura and Hiroya Ikeda, “A Scalable Si-based Micro Thermoelectric Generator,” Electron Devices Technology and Manufacturing Conference (EDTM2017), Toyama,  March 2, 2017
  2. Motohiro Tomita, Atsushi Ogura, and Takanobu Watanabe, “Development and Verification of Interatomic Potential of Group IV Binary Alloy Semiconductors for Lattice Dynamics Simulation,” the 7th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, November 24, 2016.
  3. (Young Author’s Award)Ryota Kunugi, Nobuhiro Nakagawa, Takanobu Watanabe, “Molecular Dynamics study on Dipole Layer Formation at High-k/SiO2 Interface: -Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials-” the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, November  11, 2016.
  4. Shuhei Asada, Shuichiro Hashimoto, X. Zhang , Taiyu Xu, Shunsuke Oba , Ryo Yokogawa, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa  and Takanobu Watanabe, “Impact of Ar+ Ion Irradiation on Nickelidaton Reaction of Si Nanowire Covered with Oxide Film,”  the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, November  11, 2016.
  5. Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, Takanobu Watanabe, “Dopant Distribution in Nickelided Si Nanowire Surrounded by SiO2 Film Characterized by Laser-assisted Atom Probe Tomography,” the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, November  10, 2016.
  6. (Invited) Takanobu Watanabe, “Atomistic Origin of Dipole Layer at High-k/SiO2 Interface,” 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-13), Rome, Italy, October 10, 2016.
  7. Motohiro Tomita, Atsushi Ogura, Takanobu Watanabe, “Development of Interatomic Potential of Group IV Alloy Semiconductors for Lattice Dynamics Simulation,” G05: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, ECS/PRiME 2016, Honolulu, Hawaii, October 4, 2016.
  8. Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, Takanobu Watanabe, “Anomalous Thermoelectric Characteristic of Silicon Nanowire Between Heavily Doped Silicon Pads,” 2016 International Conference on  Solid State Devices and Materials (SSDM 2016),  Tsukuba, Japan, September 29, 2016.
  9. (Invited) Takanobu Watanabe, “Molecular Dynamics Simulations on the Formation of Dielectric Thin Films and Interface Properties,” 2016 International Conference on  Solid State Devices and Materials (SSDM 2016), Short Course A “Fundamental Physics for Modeling and Simulations toward Future Electronic Device”, Tsukuba, Japan, September 26, 2016.
  10. Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, and Takanobu Watanabe, “A Silicon Nanowire Thermoelectric Device Fabricated by Top-Down Process,” the European Conference on Thermoelectrics 2016 (ECT2016), Lisbon, Portugal,  September 20th-23, 2016.
  11. Taiyu Xu, Shuichiro Hashimoto, Shuhei Asada, and Takanobu Watanabe, “Designing of a short leg thermoelectric generator on silicon,” the European Conference on Thermoelectrics 2016 (ECT2016), Lisbon, Portugal,  September 20th-23, 2016.
  12. (Invited) Takanobu Watanabe, “Statistical Simulation of Noise and Fluctuations in Nano-scale Silicon Transistors,” BIT’s 5th Annual World Congress of Advanced Materials-2016 (WCAM-2016), Chongqing, China, June 8, 2016.

 

  1. (Most Impressive Poster Award)Shuichiro Hashimoto, Kohei Takei, Jing Sun, Shuhei Asada, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe, “Origin of Preferential Diffusion of Ni along Si/SiO2 Interface in Si Nanowire,” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama International Conference Center, Toyama, Nov. 12, 2015.
  2. Shuhei Asada, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe, “Controlling Nickelidation Process of Si Nanowire by Ar+ Ion Irradiation,” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama International Conference Center, Toyama, Nov. 11, 2015.
  3. Shuichiro Hashimoto, and Takanobu Watanabe, “A New Reactive Force Field for Study on the Formation of SiC/SiO2 Interface,” 2015 International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology (IWDTF 2015), Miraikan, National Museum of Emerging Science and Innovation, Tokyo, Nov. 4, 2015.
  4. (Young Paper Award [Poster]) Ryota Kunugi, Kosuke Shimura, Takanobu Watanabe, “Molecular Dynamics Study on Dipole Layer Formation at MgxAlyOx+1.5y/SiO2 Interfaces,” 2015 International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology (IWDTF 2015), Miraikan, National Museum of Emerging Science and Innovation, Tokyo, Nov. 2, 2015.
  5. Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kitaand Takanobu Watanabe, “Positive and Negative Dipole Layer Formation at High-k/SiOInterfaces Simulated by Classical Molecular Dynamics,” 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo Convention Center, Sapporo, Sep. 29, 2015.
  6. (Invited) Takanobu Watanabe, “Impacts of RDF, RTN, and Shot Noise on Nanowire Transistor Performance Studied by Ensemble Monte Carlo / Molecular Dynamics Simulation,” 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo Convention Center, Sapporo, Sep. 29, 2015.
  7. Kohei TakeiShuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu XuTakashi Wakamizu, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe, “ON Current Enhancement of Nanowire Schottky Barrier Tunnel FET,” 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo Convention Center, Sapporo, Sep. 29, 2015.
  8. Shuichiro Hashimoto, Kohei Takei, Jing Sun, Shuhei Asada, Taiyu Xu and Takanobu Watanabe, “Enhancement of Ni Diffusion Rate in Disordered Si Nanocrystal Studied by Molecular Dynamics Simulation,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
  9. Kohei Takei, Shuichiro Hashimoto, Jing Sun, Shuhei Asada, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe, “Controlling Nickel Silicidation Process of Si Nanowires by Ar+ Ion Irradation,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
  10. Taiyu Xu, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Xu Zhang, Shuhei Asada, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe, “Demonstration of Nanowire Schottky Barrier Tunnel FET,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
  11. Kenta Imazu, Shuichiro Hashimoto, Genki Obana, Takefumi Kamioka, Takanobu Watanabe, “Morphology Changes of Ni Ion Irradiated Si(111) Surface at Room Temperature,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
  1. Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori, Keisaku Yamada, and Takanobu Watanabe, “Source-induced RDF Overwhelms RTN in Nanowire Transistor: Statistical Analysis with Full Device EMC/MD Simulation,” IEEE International Electron Devices Meeting (IEDM 2014), Hilton San Francisco Union Square, San Francisco, USA, Dec. 14, 2014.
  2. Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Jing Sun, R. Imai, H. Tokutake, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa Meishoku Masahara and Takanobu Watanabe, “Impact of post-oxidation annealing of Si nanowire on its Ni silicidation rate,” 27th International Microprocesses and Nanotechnology Conference (MNC 2014), Hilton Fukuoka Sea Hawk, Fukuoka, Japan, Nov. 6, 2014.
  3. (Invited) Takanobu Watanabe, Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi, Kosuke Shimura, Atsushi Ogura, and Sinich Satoh, “Molecular Dynamics Simulation of Dipole Layer Formation at High-k/SiO2 Interface,” 226th Meeting of The Electrochemical Society, Moon Palace Resort, Cancun, Mexico Oct. 6, 2014.
  4. Tomofumi Zushi, Kenji Ohmori, Keisaku Yamada, and Takanobu Watanabe, ” Thermal Transport Properties of Si Nanowire Covered with SiO2 Layer: A Molecular Dynamics Study,” 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Epocal Tsukuba, Tsukuba, Japan, Sep. 10, 2014.
  5. Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, and Takanobu Watanabe, “Full-Scale Whole Device EMC/MD Simulation of Si Nanowire Transistor Including Source and Drain Regions by Utilizing Graphic Processing Units,” 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014),” Mielparque Yokohama, Yokohama, Japan, Sep. 11, 2014.