志村昂亮君（M2）と武井康平君（M2）が筆頭著者として執筆した論文がJapanese Journal of Applied Physics誌第55巻に掲載されました。

Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kita, Takanobu Watanabe, “Positive and Negative Dipole Layer Formation at High-k/SiO2 Interfaces Simulated by Classical Molecular Dynamics,” Japanese Journal of Applied Physics, Vol.55, 04EB03 (2016). doi:10.7567/JJAP.55.04EB03

Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe, “ON current enhancement of nanowire Schottky barrier tunnel field effect transistors,”Japanese Journal of Applied Physics, Vol.55, 04ED07(2016). doi:10.7567/JJAP.55.04ED07