Papers

  1. Ryo Yokogawa, Shuichiro Hashimoto, Shuhei Asada, Motohiro Tomita, Takanobu Watanabe, and Atsushi Ogura, “Evaluation of controlled strain in silicon nanowire by UV Raman spectroscopy,”  Japanese Journal of Applied Physics, Vol. 56, 06GG10 (2017). doi:10.7567/JJAP.56.06GG10
  2. Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, and Koji Kita, “Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions,” Applied Physics Letters, Vol. 110, 162907 (2017). doi:10.1063/1.4980059
  3. Ryota Kunugi, Nobuhiro Nakagawa, Takanobu Watanabe, “Driving force of oxygen ion migration across high‐k/SiO2 interface,” Applied Physics Express, Vol. 10, 031501 (2017). doi:10.7567/APEX.10.031501
  4. Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe, “ON current enhancement of nanowire Schottky barrier tunnel field effect transistors,” Japanese Journal of Applied Physics, Vol.55, 04ED07(2016). doi:10.7567/JJAP.55.04ED07
  5. Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kita, Takanobu Watanabe, “Positive and Negative Dipole Layer Formation at High-k/SiO2 Interfaces Simulated by Classical Molecular Dynamics,” Japanese Journal of Applied Physics, Vol.55, 04EB03 (2016). doi:10.7567/JJAP.55.04EB03
  6. Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Sung Jing, Yuji Kawamura, Yasuhiro Shikahama, and Takanobu Watanabe, “Impact of Image Force Effect on Gate-All-Around Schottky Barrier Tunnel FET,” IEEE Xplore Digital Library, 2014 IEEE International Nanoelectronics Conference (INEC) (2014). doi:10.1109/INEC.2014.7460424
  7. Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, and Takanobu Watanabe, “Particle-based Semiconductor Device Simulation Accelerated by GPU computing,” Japan Society for Simulation Technology, Vol. 2, No. 1, pp. 211-224 (2015). doi:10.15748/jasse.2.21
  8. Tomofumi Zushi, Kenji Ohmori, Keisaku Yamada, and Takanobu Watanabe, “Effect of a SiO2 layer on the thermal transport properties of <100> Si nanowires: A molecular dynamics study,” Physical Review B Vol.91, 115308, (2015).  doi:10.1103/PhysRevB.91.115308.
  9. (Extended Abstract)  Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori,　Keisaku Yamada, and Takanobu Watanabe, “Source-induced RDF Overwhelms RTN in Nanowire Transistor: Statistical Analysis with Full Device EMC/MD Simulation Accelerated by GPU Computing,” IEEE International Electron Devices Meeting (IEDM 2014) Extended Abstract, 30.1, pp.713-716 (2014). doi:10.1109/IEDM.2014.7047139
  10. (Proceedings) Takanobu Watanabe, Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi, Kosuke Shimura, Atsushi Ogura, ans Shinichi Satoh, “Molecular Dynamics Simulation of Dipole Layer Formation at High-k/SiO2 Interface,” ECS Transcations Vol. 64, pp.3-15, (2014). doi:10.1149/06408.0003ecst
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