Papers

  1. (Proceedings) Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, and Takanobu Watanabe, “Full-Scale Whole Device EMC/MD Simulation of Si Nanowire Transistor Including Source and Drain Regions by Utilizing Graphic Processing Units,” 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014) Proceedings, pp.357-360, (2014). doi:10.1109/SISPAD.2014.6931637
  2. Hiroki Yamashita, Hiroki Kosugiyama, Yasuhiro Shikahama, Shuichiro Hashimoto, Kouhei Takei , Jing Sun, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe, ” Impact of Thermal History of Si Nanowire Fabrication Process on Ni Silicidation Rate,” Japanese Journal of Applied Physics Vol. 53, 085201, (2014). doi:10.7567/JJAP.53.085201
  3. Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi, Atsushi Ogura, Shinichi Satoh, and Takanobu Watanabe, “Molecular Dynamics Study on the Formation of Dipole Layer at High-k/SiO2 Interfaces,” Japanese Journal of Applied Physics Vol. 53, 08LB02, (2014).doi:10.7567/JJAP.53.08LB02
  4. Tomofumi Zushi, Kosuke Shimura, Masanori Tomita, Kenji Ohmori, Keisaku Yamada and Takanobu Watanabe, “Phonon Dispersion in <100> Si Nanowire Covered with SiO2 Film Calculated by Molecular Dynamics Simulation,” ECS Journal of Solid State Science and Technology Vol. 3, pp.P149-P154, (2014). doi: 10.1149/2.010405jss
  5. Nobuya Mori, Masanori Tomita, Hideki Minari, Takanobu Watanabe, and Nobuyoshi Koshida, “Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array,”  Japanese Journal of Applied Physics Vol. 52, 04CJ04, (2013).doi:10.7567/JJAP.52.04CJ04
  6. (Extended Abstract) Takefumi Kamioka, Hiroya Imai, Yoshinari Kamakura, Kenji Ohmori, Kenji Shiraishi, Masanori Niwa, Keisaku Yamada, and Takanobu Watanabe, “Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation,” IEEE International Electron Devices Meeting (IEDM 2012) Extended Abstract, 17.2, p.399-402, (2012). doi:10.1109/IEDM.2012.6479058
  7. (Proceedings) Takanobu Watanabe, Tomofumi Zushi, Masanori Tomita, Ryo Kuriyama, Naoshige Aoki, Takefumi Kamioka, “Phonon Dispersion in <100> Si Nanowire Covered with SiO2 Film Calculated by Molecular Dynamics Simulation,” ECS Transactions , Vol.50, pp.673-680, (2012). doi:10.1149/05009.0673ecst
  8. (Proceedings) Tomofumi Zushi, Takanobu Watanabe, Kenji Ohmori, and Keisaku Yamada, “Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures,” 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2012) Proceedings, pp.59-62, (2012).
  9. (Proceedings) Takefumi Kamioka, Hiroya Imai, Yoshinari Kamakura, Kenji Ohmori, Kenji Shiraishi, Masanori Niwa, Keisaku Yamada, Takanobu Watanabe, “Impact of single trapped charge in gate-all-around nanowire channels studied by ensemble Monte Carlo/molecular dynamics simulation,” 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2012) Proceedings, pp.11-14, (2012).
  10. (Japanese) Takefumi Kamioka, Fumiya Isono, Takanobu Watanabe, and Iwao Ohdomari, “Real-Time Scanning Tunneling Microscopy of Au Ion Irradiation Effects on Si(111) Surface,” Hyomen-Kgaku Vol .33, pp.153-158, (2012). doi:10.1380/jsssj.33.153