Presentations

  1. Shuichiro Hashimoto, Kohei Takei, Jing Sun, Shuhei Asada, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe, “Origin of Preferential Diffusion of Ni along Si/SiO2 Interface in Si Nanowire,” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama International Conference Center, Toyama, Nov. 12, 2015.
  2. Shuhei Asada, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe, “Controlling Nickelidation Process of Si Nanowire by Ar+ Ion Irradiation,” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama International Conference Center, Toyama, Nov. 11, 2015.
  3. Shuichiro Hashimoto, and Takanobu Watanabe, “A New Reactive Force Field for Study on the Formation of SiC/SiO2 Interface,” 2015 International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology (IWDTF 2015), Miraikan, National Museum of Emerging Science and Innovation, Tokyo, Nov. 4, 2015.
  4. Ryota Kunugi, Kosuke Shimura, Takanobu Watanabe, “Molecular Dynamics Study on Dipole Layer Formation at MgxAlyOx+1.5y/SiO2 Interfaces,” 2015 International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology (IWDTF 2015), Miraikan, National Museum of Emerging Science and Innovation, Tokyo, Nov. 2, 2015.
  5. Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kita, and Takanobu Watanabe, “Positive and Negative Dipole Layer Formation at High-k/SiO2 Interfaces Simulated by Classical Molecular Dynamics,” 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo Convention Center, Sapporo, Sep. 29, 2015.
  6. Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Wakamizu, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe, “ON Current Enhancement of Nanowire Schottky Barrier Tunnel FET,” 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo Convention Center, Sapporo, Sep. 29, 2015.
  7. Shuichiro Hashimoto, Kohei Takei, Jing Sun, Shuhei Asada, Taiyu Xu and Takanobu Watanabe, “Enhancement of Ni Diffusion Rate in Disordered Si Nanocrystal Studied by Molecular Dynamics Simulation,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
  8. Kohei Takei, Shuichiro Hashimoto, Jing Sun, Shuhei Asada, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe, “Controlling Nickel Silicidation Process of Si Nanowires by Ar+ Ion Irradation,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
  9. Taiyu Xu, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Xu Zhang, Shuhei Asada, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe, “Demonstration of Nanowire Schottky Barrier Tunnel FET,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
  10. Kenta Imazu, Shuichiro Hashimoto, Genki Obana, Takefumi Kamioka, Takanobu Watanabe, “Morphology Changes of Ni Ion Irradiated Si(111) Surface at Room Temperature,” The 6th Waseda-NIMS International Symposium, Waseda University, Jul. 29, 2015.
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