Presentations

  1. Ryota Kunugi, Nobuhiro Nakagawa, Takanobu Watanabe, “Molecular Dynamics study on Dipole Layer Formation at High-k/SiO2 Interface: -Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials-” the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, November  11, 2016.
  2. Shuhei Asada, Shuichiro Hashimoto, X. Zhang , Taiyu Xu, Shunsuke Oba , Ryo Yokogawa, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa  and Takanobu Watanabe, “Impact of Ar+ Ion Irradiation on Nickelidaton Reaction of Si Nanowire Covered with Oxide Film,”  the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, November  11, 2016.
  3. Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, Takanobu Watanabe, “Dopant Distribution in Nickelided Si Nanowire Surrounded by SiO2 Film Characterized by Laser-assisted Atom Probe Tomography,” the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, November  10, 2016.
  4. (Invited) Takanobu Watanabe, “Atomistic Origin of Dipole Layer at High-k/SiO2 Interface,” 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-13), Rome, Italy, October 10, 2016.
  5. Motohiro Tomita, Atsushi Ogura, Takanobu Watanabe, “Development of Interatomic Potential of Group IV Alloy Semiconductors for Lattice Dynamics Simulation,” G05: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, ECS/PRiME 2016, Honolulu, Hawaii, October 4, 2016.
  6. Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, Takanobu Watanabe, “Anomalous Thermoelectric Characteristic of Silicon Nanowire Between Heavily Doped Silicon Pads,” 2016 International Conference on  Solid State Devices and Materials (SSDM 2016),  Tsukuba, Japan, September 29, 2016.
  7. (Invited) Takanobu Watanabe, “Molecular Dynamics Simulations on the Formation of Dielectric Thin Films and Interface Properties,” 2016 International Conference on  Solid State Devices and Materials (SSDM 2016), Short Course A “Fundamental Physics for Modeling and Simulations toward Future Electronic Device”, Tsukuba, Japan, September 26, 2016.
  8. Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, and Takanobu Watanabe, “A Silicon Nanowire Thermoelectric Device Fabricated by Top-Down Process,” the European Conference on Thermoelectrics 2016 (ECT2016), Lisbon, Portugal,  September 20th-23, 2016.
  9. Taiyu Xu, Shuichiro Hashimoto, Shuhei Asada, and Takanobu Watanabe, “Designing of a short leg thermoelectric generator on silicon,” the European Conference on Thermoelectrics 2016 (ECT2016), Lisbon, Portugal,  September 20th-23, 2016.
  10. (Invited) Takanobu Watanabe, “Statistical Simulation of Noise and Fluctuations in Nano-scale Silicon Transistors,” BIT’s 5th Annual World Congress of Advanced Materials-2016 (WCAM-2016), Chongqing, China, June 8, 2016.
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